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New 1200 V, 215 mΩ (typ) SiC power MOSFET from STMicroelectronics
ST has extended its SiC MOSFET portfolio with the introduction of the 215 mΩ (typ), 1200 V SCT20N120. Just as the 80 mΩ version (SCT30N120), the device is packaged in the proprietary HiP247™ package and features the industry's highest junction temperature rating of 200 °C. It shows a very small variation of the on-state resistance versus Tj and also the switching performance is consistent over temperature. This easy-to-drive device can operate at three times the switching frequency of similar-rated IGBTs and results in more compact, reliable and efficient designs in applications such as solar inverters, high-voltage power supplies and high-efficiency drives.
Based on the advanced and innovative properties of wide bandgap materials, ST's silicon carbide (SiC) MOSFETs feature very low RDS(on) * area for the 1200 V rating combined with excellent switching performance, translating into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance * area even at high temperatures and excellent switching performances versus the best-in-class 1200 V IGBTs in all temperature ranges, simplifying the thermal design of power electronic systems.
The main features and benefits of our SiC MOSFETs include:
-Very high temperature handling capability (Tj max = 200 °C) leading to reduced PCB form factors (simplified thermal management) as well as improved system reliability
-Significantly reduced switching losses (minimal variation versus temperature) resulting in more compact designs (with smaller passive components)
-Low on-state resistance (80 mΩ typ @ 25 °C) resulting in higher system efficiency (reduced cooling requirements)
-Simple to drive (cost-effective network driving)
-Very fast and robust intrinsic body diode (no need for external freewheeling diode, thus more compact systems)
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