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Rohm Starts Mass Production of First Trench-type SiC MOSFET
SiC Trench MOSFET
" ... Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in the chip surface). Unlike planar-type MOSFETs, junction gate (JFET) resistance does not exist, enabling greater miniaturization (which is expected to result in on-resistance close to the performance of the original SiC material)."
Compared with existing planar-type SiC MOSFETs, in Rohm's new trench-type SiC MOSFET (which uses a proprietary structure) the switching performance is improved (with input capacitance reduced by 35%) and on-resistance is halved in the same chip size. This makes it possible to significantly decrease power loss in a variety of equipment, from industrial inverters and power supplies to power conditioners for solar power systems. ... "
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